Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, W. -R. | en_US |
dc.contributor.author | Li, Y. -H. | en_US |
dc.contributor.author | Hsieh, W. F. | en_US |
dc.contributor.author | Hsu, C. -H. | en_US |
dc.contributor.author | Lee, W. C. | en_US |
dc.contributor.author | Lee, Y. J. | en_US |
dc.contributor.author | Hong, M. | en_US |
dc.contributor.author | Kwo, J. | en_US |
dc.date.accessioned | 2019-04-02T06:00:59Z | - |
dc.date.available | 2019-04-02T06:00:59Z | - |
dc.date.issued | 2009-01-01 | en_US |
dc.identifier.issn | 1528-7483 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/cg8003849 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149722 | - |
dc.description.abstract | High-quality ZnO epitaxial films have been grown by pulsed-laser deposition on Si (111) substrates using a nanothick high-k oxide Y2O3 buffer layer. Determined by X-ray diffraction and transmission electron microscopy, the epitaxial relationship between ZnO and Y2O3 follows (0001)< 2 (1) over bar(1) over bar0 >(ZnO)parallel to(111)< 10 (1) over bar > Y2O3. ZnO lattice aligns with the hexagonal O sublattice in Y2O3 and the interfacial structure can be well described by domain matching epitaxy with 7 or 8 ZnO {11 (2) over bar0} planes matching 6 or 7 {4 (4) over bar0} planes Of Y2O3 and lead to a significant reduction of residual strain. Superior optical properties were obtained even for ZnO films as thin as 0.21 mu m from photoluminescence results. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111) | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/cg8003849 | en_US |
dc.identifier.journal | CRYSTAL GROWTH & DESIGN | en_US |
dc.citation.volume | 9 | en_US |
dc.citation.spage | 239 | en_US |
dc.citation.epage | 242 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 光電工程研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of EO Enginerring | en_US |
dc.identifier.wosnumber | WOS:000262332700038 | en_US |
dc.citation.woscount | 28 | en_US |
Appears in Collections: | Articles |