標題: | The Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer Layer |
作者: | Lin, B. H. Liu, W. R. Yang, S. Kuo, C. C. Hsu, C. -H. Hsieh, W. F. Lee, W. C. Lee, Y. J. Hong, M. Kwo, J. 光電工程學系 光電工程研究所 Department of Photonics Institute of EO Enginerring |
公開日期: | 1-七月-2011 |
摘要: | High-quality (0001)-oriented ZnO epitaxial films have been grown by pulsed laser deposition on Si(111) buffered with a nanometer-thick Gd2O3(Ga2O3), GGO, layer. The structural characteristics of the ZnO epi-layers were studied by X-ray diffraction and transmission electron microscopy (TEM). The in-plane epitaxial relationship between the wurtzite ZnO, cubic GGO, and cubic Si follows {10 (1) over bar0}(ZNO)parallel to{4 (22) over bar}(Gd2O3)parallel to{(4) over bar 22}(Si) and the ZnO/GGO interface can be described by the domain matching epitaxy. TEM contrast analysis reveals that the major defect structures in the ZnO films are edge-type threading dislocations and intrinsic basal plane stacking faults. All the ZnO epi-films studied are under a tensile biaxial strain, but no cracks were found. Temperature-dependent photoluminescence results show the excellent optical properties of the obtained ZnO layers, and the origins of the spectral features are discussed. |
URI: | http://dx.doi.org/10.1021/cg1016774 http://hdl.handle.net/11536/150334 |
ISSN: | 1528-7483 |
DOI: | 10.1021/cg1016774 |
期刊: | CRYSTAL GROWTH & DESIGN |
Volume: | 11 |
起始頁: | 2846 |
結束頁: | 2851 |
顯示於類別: | 期刊論文 |