The Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer Layer

Abstract

High-quality (0001)-oriented ZnO epitaxial films have been grown by pulsed laser deposition on Si(111) buffered with a nanometer-thick Gd2O3(Ga2O3), GGO, layer. The structural characteristics of the ZnO epi-layers were studied by X-ray diffraction and transmission electron microscopy (TEM). The in-plane epitaxial relationship between the wurtzite ZnO, cubic GGO, and cubic Si follows {10 (1) over bar0}(ZNO)parallel to{4 (22) over bar}(Gd2O3)parallel to{(4) over bar 22}(Si) and the ZnO/GGO interface can be described by the domain matching epitaxy. TEM contrast analysis reveals that the major defect structures in the ZnO films are edge-type threading dislocations and intrinsic basal plane stacking faults. All the ZnO epi-films studied are under a tensile biaxial strain, but no cracks were found. Temperature-dependent photoluminescence results show the excellent optical properties of the obtained ZnO layers, and the origins of the spectral features are discussed.