標題: The Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer Layer
作者: Lin, B. H.
Liu, W. R.
Yang, S.
Kuo, C. C.
Hsu, C. -H.
Hsieh, W. F.
Lee, W. C.
Lee, Y. J.
Hong, M.
Kwo, J.
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
公開日期: 1-Jul-2011
摘要: High-quality (0001)-oriented ZnO epitaxial films have been grown by pulsed laser deposition on Si(111) buffered with a nanometer-thick Gd2O3(Ga2O3), GGO, layer. The structural characteristics of the ZnO epi-layers were studied by X-ray diffraction and transmission electron microscopy (TEM). The in-plane epitaxial relationship between the wurtzite ZnO, cubic GGO, and cubic Si follows {10 (1) over bar0}(ZNO)parallel to{4 (22) over bar}(Gd2O3)parallel to{(4) over bar 22}(Si) and the ZnO/GGO interface can be described by the domain matching epitaxy. TEM contrast analysis reveals that the major defect structures in the ZnO films are edge-type threading dislocations and intrinsic basal plane stacking faults. All the ZnO epi-films studied are under a tensile biaxial strain, but no cracks were found. Temperature-dependent photoluminescence results show the excellent optical properties of the obtained ZnO layers, and the origins of the spectral features are discussed.
URI: http://dx.doi.org/10.1021/cg1016774
http://hdl.handle.net/11536/150334
ISSN: 1528-7483
DOI: 10.1021/cg1016774
期刊: CRYSTAL GROWTH & DESIGN
Volume: 11
起始頁: 2846
結束頁: 2851
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