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dc.contributor.authorLin, B. H.en_US
dc.contributor.authorLiu, W. R.en_US
dc.contributor.authorYang, S.en_US
dc.contributor.authorKuo, C. C.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorLee, W. C.en_US
dc.contributor.authorLee, Y. J.en_US
dc.contributor.authorHong, M.en_US
dc.contributor.authorKwo, J.en_US
dc.date.accessioned2019-04-02T05:58:53Z-
dc.date.available2019-04-02T05:58:53Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn1528-7483en_US
dc.identifier.urihttp://dx.doi.org/10.1021/cg1016774en_US
dc.identifier.urihttp://hdl.handle.net/11536/150334-
dc.description.abstractHigh-quality (0001)-oriented ZnO epitaxial films have been grown by pulsed laser deposition on Si(111) buffered with a nanometer-thick Gd2O3(Ga2O3), GGO, layer. The structural characteristics of the ZnO epi-layers were studied by X-ray diffraction and transmission electron microscopy (TEM). The in-plane epitaxial relationship between the wurtzite ZnO, cubic GGO, and cubic Si follows {10 (1) over bar0}(ZNO)parallel to{4 (22) over bar}(Gd2O3)parallel to{(4) over bar 22}(Si) and the ZnO/GGO interface can be described by the domain matching epitaxy. TEM contrast analysis reveals that the major defect structures in the ZnO films are edge-type threading dislocations and intrinsic basal plane stacking faults. All the ZnO epi-films studied are under a tensile biaxial strain, but no cracks were found. Temperature-dependent photoluminescence results show the excellent optical properties of the obtained ZnO layers, and the origins of the spectral features are discussed.en_US
dc.language.isoen_USen_US
dc.titleThe Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer Layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1021/cg1016774en_US
dc.identifier.journalCRYSTAL GROWTH & DESIGNen_US
dc.citation.volume11en_US
dc.citation.spage2846en_US
dc.citation.epage2851en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000292417200026en_US
dc.citation.woscount13en_US
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