標題: The substrate effect on the in-plane orientation of vertically well-aligned ZnO nanorods grown on ZnO buffer layers
作者: Cheng, HM
Hsu, HC
Yang, S
Wu, CY
Lee, YC
Lin, LJ
Hsieh, WF
光電工程學系
Department of Photonics
公開日期: 1-十二月-2005
摘要: Vertically well-aligned ZnO nanorods were synthesized without employing any metal catalysts on various substrates including glass, Si(111), 6H-SiC(0001) and sapphire (0001), which were pre-coated with c-oriented ZnO buffer layers, by simple physical vapour deposition. The alignments of the ZnO nanorods on the different substrates depend on the crystallographic alignments of the pre-coated ZnO buffer layers. The ZnO nanorods grown on glass and Si(111) are vertically aligned but randomly oriented in the in-plane direction. In contrast, the vertically aligned ZnO nanorods on 6H-SiC(0001) and sapphire (0001) show an in-plane alignment with azimuthally sixfold symmetry, which indicates the epitaxial relationship between ZnO and the substrate. Similarly, photoluminescence measurements show the distinct appearance of ZnO nanorods on different substrates. Besides the UV band, which was attributed to the recombination of free excitons near the band edge, defect-related visible emissions were also observed for the samples grown on both glass and Si(111) substrates. However, the ZnO nanorods exhibit only strong band edge emission peaks with no noticeable deep level emissions when grown on the 6H-SiC(0001) and sapphire (0001) substrates, which confirms the good crystalline and optical quality of the epitaxial ZnO nanorods.
URI: http://dx.doi.org/10.1088/0957-4484/16/12/025
http://hdl.handle.net/11536/13017
ISSN: 0957-4484
DOI: 10.1088/0957-4484/16/12/025
期刊: NANOTECHNOLOGY
Volume: 16
Issue: 12
起始頁: 2882
結束頁: 2886
顯示於類別:期刊論文


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