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dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorLin, Chi-Haoen_US
dc.contributor.authorYeh, Shanen_US
dc.contributor.authorTu, Cheng-Cheen_US
dc.contributor.authorKarim, Karim S.en_US
dc.date.accessioned2019-12-13T01:12:18Z-
dc.date.available2019-12-13T01:12:18Z-
dc.date.issued2019-10-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2019.2933225en_US
dc.identifier.urihttp://hdl.handle.net/11536/153169-
dc.description.abstractIn this article, we proposed a low-temperature poly-silicon (LTPS) active pixel sensor (APS) circuit with threshold voltage (V-th) compensation. LTPS thin-film transistors (TFTs) are known to degrade under long-term irradiation and this is quantified. Simulation results and experimental data confirm that the proposed APS circuit compensates the instability of LTPS TFTs and is a promising, high-performance alternative to current amorphous silicon (a-Si) pixel-based X-ray detectors.en_US
dc.language.isoen_USen_US
dc.subjectActive pixel sensor (APS)en_US
dc.subjectLTPSen_US
dc.subjectthin-film transistor (TFT)en_US
dc.subjectthreshold voltage compensationen_US
dc.subjectX-ray imageren_US
dc.titleLTPS Active Pixel Circuit With Threshold Voltage Compensation for X-Ray Imaging Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2019.2933225en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume66en_US
dc.citation.issue10en_US
dc.citation.spage4216en_US
dc.citation.epage4220en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000487477600016en_US
dc.citation.woscount0en_US
Appears in Collections:Articles