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dc.contributor.authorKer, MDen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorJiang, HCen_US
dc.date.accessioned2014-12-08T15:26:36Z-
dc.date.available2014-12-08T15:26:36Z-
dc.date.issued2002en_US
dc.identifier.isbn0-7803-7363-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/18900-
dc.description.abstractA charge pump circuit realized with the substrate-isolated polysilicon diode in the 0.25-mum CMOS process is proposed. With the polysilicon diode, the stable negative voltage generation can be realized in general sub-quarter-micron CMOS process without extra process modification or additional mask layer. The device characteristic of polysilicon diode and the voltage waveforms of the negative charge pump circuit have been successfully verified in a 0.25-mum CMOS process with grounded p-type substrate.en_US
dc.language.isoen_USen_US
dc.subjectpolysilicon diodeen_US
dc.subjectcharge pump circuiten_US
dc.titleDesign of negative charge pump circuit with polysilicon diodes in a 0.25-mu m CMOS processen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2002 IEEE ASIA-PACIFIC CONFERENCE ON ASIC PROCEEDINGSen_US
dc.citation.spage145en_US
dc.citation.epage148en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000180272700037-
Appears in Collections:Conferences Paper