Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, Jui-Yuanen_US
dc.contributor.authorHsin, Cheng-Lunen_US
dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorChiu, Chung-Huaen_US
dc.contributor.authorHuang, Yu-Tingen_US
dc.contributor.authorLin, Su-Jienen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorChen, Lih-Juannen_US
dc.date.accessioned2014-12-08T15:32:03Z-
dc.date.available2014-12-08T15:32:03Z-
dc.date.issued2013-08-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nl4015638en_US
dc.identifier.urihttp://hdl.handle.net/11536/22592-
dc.description.abstractResistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of conductive filaments in the Pt/ZnO/Pt structure in real time. The corresponding current-voltage measurements help us to understand the switching mechanism of ZnO film. In addition, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) have been used to identify the atomic structure and components of the filament/disrupted region, determining that the conducting paths are caused by the conglomeration of zinc atoms. The behavior of resistive switching is due to the migration of oxygen ions, leading to transformation between Zn-dominated ZnO1-x and ZnO.en_US
dc.language.isoen_USen_US
dc.subjectIn situ TEMen_US
dc.subjectRRAMen_US
dc.subjectresistive switchingen_US
dc.subjectnanofilamenten_US
dc.subjectredoxen_US
dc.subjectunipolaren_US
dc.titleDynamic Evolution of Conducting Nanofilament in Resistive Switching Memoriesen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nl4015638en_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume13en_US
dc.citation.issue8en_US
dc.citation.spage3671en_US
dc.citation.epage3677en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000323241000036-
dc.citation.woscount35-
Appears in Collections:Articles


Files in This Item:

  1. 000323241000036.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.