標題: Self-formed conductive nanofilaments in (Bi, Mn)O-x for ultralow-power memory devices
作者: Kang, Chen-Fang
Kuo, Wei-Cheng
Bao, Wenzhong
Ho, Chih-Hsiang
Huang, Chun-Wei
Wu, Wen-Wei
Chu, Ying-Hao
Juang, Jenh-Yih
Tseng, Snow H.
Hu, Liangbing
He, Jr-Hau
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: Nanofilament;Operating energy;Uttratow power;Memory;Complex metal oxide
公開日期: 1-四月-2015
摘要: Resistive random access memory (RRAM) is one of the most promising candidates as a next generation nonvolatile memory (NVM), owing to its superior scalability, low power consumption and high speed. From the materials science point of view, to explore optimal RRAM materials is still essential for practical application. In this work, a new material (Ni, Mn)0 (BMO) is investigated and several key performance characteristics of Pt/ BMO/Pt structured device, including switching performance, retention and endurance, are examined in details. Furthermore, it has been confirmed by high-resolution transmission electron microscopy that the underlying switching mechanism is attributed to formation and disruption of metallic conducting nanofilaments (CNFs). More importantly, the power dissipation for each CNF is as low as 3.8/20 fJ for set/reset process, and a realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. These distinctive properties have important implications for understanding switching mechanisms and implementing ultralow power-dissipation RRAM based on BMO. (C) 2015 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.nanoen.2015.02.033
http://hdl.handle.net/11536/128090
ISSN: 2211-2855
DOI: 10.1016/j.nanoen.2015.02.033
期刊: NANO ENERGY
Volume: 13
起始頁: 283
結束頁: 290
顯示於類別:期刊論文