標題: | Self-formed conductive nanofilaments in (Bi, Mn)O-x for ultralow-power memory devices |
作者: | Kang, Chen-Fang Kuo, Wei-Cheng Bao, Wenzhong Ho, Chih-Hsiang Huang, Chun-Wei Wu, Wen-Wei Chu, Ying-Hao Juang, Jenh-Yih Tseng, Snow H. Hu, Liangbing He, Jr-Hau 材料科學與工程學系 電子物理學系 Department of Materials Science and Engineering Department of Electrophysics |
關鍵字: | Nanofilament;Operating energy;Uttratow power;Memory;Complex metal oxide |
公開日期: | 1-四月-2015 |
摘要: | Resistive random access memory (RRAM) is one of the most promising candidates as a next generation nonvolatile memory (NVM), owing to its superior scalability, low power consumption and high speed. From the materials science point of view, to explore optimal RRAM materials is still essential for practical application. In this work, a new material (Ni, Mn)0 (BMO) is investigated and several key performance characteristics of Pt/ BMO/Pt structured device, including switching performance, retention and endurance, are examined in details. Furthermore, it has been confirmed by high-resolution transmission electron microscopy that the underlying switching mechanism is attributed to formation and disruption of metallic conducting nanofilaments (CNFs). More importantly, the power dissipation for each CNF is as low as 3.8/20 fJ for set/reset process, and a realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. These distinctive properties have important implications for understanding switching mechanisms and implementing ultralow power-dissipation RRAM based on BMO. (C) 2015 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.nanoen.2015.02.033 http://hdl.handle.net/11536/128090 |
ISSN: | 2211-2855 |
DOI: | 10.1016/j.nanoen.2015.02.033 |
期刊: | NANO ENERGY |
Volume: | 13 |
起始頁: | 283 |
結束頁: | 290 |
顯示於類別: | 期刊論文 |