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dc.contributor.authorChen, Yu-Juien_US
dc.contributor.authorWei, Cheng-Wenen_US
dc.contributor.authorYi FanChiangen_US
dc.contributor.authorMeng, Yi-Leen_US
dc.contributor.authorHuang, Yi-Chengen_US
dc.contributor.authorJou, Shyh-Jyeen_US
dc.date.accessioned2014-12-08T15:35:05Z-
dc.date.available2014-12-08T15:35:05Z-
dc.date.issued2014-02-01en_US
dc.identifier.issn1549-8328en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSI.2013.2278348en_US
dc.identifier.urihttp://hdl.handle.net/11536/23814-
dc.description.abstractThis paper presents a low computational complexity hardware-oriented neuromorphic pitch based noise reduction (NR) algorithm and hardware implementation for monosyllable hearing aid system applications. The proposed NR design consists of a pitch-based voice activity detector (pitch-based VAD) for speech detection and a neuromorphic noise attenuator for speech enhancement. The pitch-based VAD is developed on ANSI S1.11 based filter bank architecture and employs the characteristics of monosyllable and nonlinear energy operator (NEO) to improve the accuracy of VAD. The neuromorphic noise attenuator reduces the background noise by using the characteristics of human hearing system and the clues of speech. Simulation results show that the proposed algorithm has better SNR and PESQ performance than other non-pitch based NR algorithms in non-stationary background noise environments. Compared with multiband (mband) spectral subtraction and minimum mean square error (mmse) algorithms, the computational complexity of the proposed algorithm can save 90% computational complexity. The hardware implementation consumes 47.74 mu W at 0.5 V operation with 65 nm HVT standard cell library.en_US
dc.language.isoen_USen_US
dc.subjectHearing aidsen_US
dc.subjectMandarinen_US
dc.subjectneuromorphicen_US
dc.subjectnoise reductionen_US
dc.subjectnon-stationaryen_US
dc.subjectpitchen_US
dc.titleNeuromorphic Pitch Based Noise Reduction for Monosyllable Hearing Aid System Applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCSI.2013.2278348en_US
dc.identifier.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERSen_US
dc.citation.volume61en_US
dc.citation.issue2en_US
dc.citation.spage463en_US
dc.citation.epage475en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000331191800013-
dc.citation.woscount1-
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