Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dai, Ming-Zhi | en_US |
dc.contributor.author | Chen, Yen-Ho | en_US |
dc.contributor.author | Chuang, Ming-Yen | en_US |
dc.contributor.author | Zan, Hsiao-Wen | en_US |
dc.contributor.author | Meng, Hsin-Fei | en_US |
dc.date.accessioned | 2019-04-03T06:40:48Z | - |
dc.date.available | 2019-04-03T06:40:48Z | - |
dc.date.issued | 2014-09-01 | en_US |
dc.identifier.issn | 1424-8220 | en_US |
dc.identifier.uri | http://dx.doi.org/10.3390/s140916287 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25381 | - |
dc.description.abstract | In this study, we investigate the keys to obtain a sensitive ammonia sensor with high air stability by using a low-cost polythiophene diode with a vertical channel and a porous top electrode. Poly(3-hexylthiophene) (P3HT) and air-stable poly(5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene) (PQT-12) are both evaluated as the active sensing layer. Two-dimensional current simulation reveals that the proposed device exhibits numerous connected vertical nanometer junctions (VNJ). Due to the de-doping reaction between ammonia molecules and the bulk current flowing through the vertical channel, both PQT-12 and P3HT VNJ-diodes exhibit detection limits of 50-ppb ammonia. The P3HT VNJ-diode, however, becomes unstable after being stored in air for two days. On the contrary, the PQT-12 VNJ-diode keeps an almost unchanged response to 50-ppb ammonia after being stored in air for 25 days. The improved storage lifetime of an organic-semiconductor-based gas sensor in air is successfully demonstrated. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | ammonia | en_US |
dc.subject | gas sensor | en_US |
dc.subject | polythiophene | en_US |
dc.subject | solid-state sensors | en_US |
dc.title | Achieving a Good Life Time in a Vertical-Organic-Diode Gas Sensor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.3390/s140916287 | en_US |
dc.identifier.journal | SENSORS | en_US |
dc.citation.volume | 14 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 16287 | en_US |
dc.citation.epage | 16295 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 光電工程研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of EO Enginerring | en_US |
dc.identifier.wosnumber | WOS:000343106600039 | en_US |
dc.citation.woscount | 9 | en_US |
Appears in Collections: | Articles |
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