Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)

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DC Field	Value	Language
dc.contributor.author	Chang, TC	en_US
dc.contributor.author	Tsai, TM	en_US
dc.contributor.author	Liu, PT	en_US
dc.contributor.author	Mor, YS	en_US
dc.contributor.author	Chen, CW	en_US
dc.contributor.author	Sheu, JT	en_US
dc.contributor.author	Tseng, TY	en_US
dc.date.accessioned	2014-12-08T15:40:42Z	-
dc.date.available	2014-12-08T15:40:42Z	-
dc.date.issued	2003-07-01	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.1576571	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27766	-
dc.language.iso	en_US	en_US
dc.title	Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)	en_US
dc.type	Correction	en_US
dc.identifier.doi	10.1149/1.1576571	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	6	en_US
dc.citation.issue	7	en_US
dc.citation.spage	L3	en_US
dc.citation.epage	L3	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000183151000017	-
dc.citation.woscount	0	-
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