Electroless plating with Pd induced crystallization of amorphous silicon thin films

doi:10.1143/JJAP.41.6356

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DC Field	Value	Language
dc.contributor.author	Hu, GR	en_US
dc.contributor.author	Wu, YCS	en_US
dc.contributor.author	Chao, CW	en_US
dc.contributor.author	Huang, TJ	en_US
dc.date.accessioned	2014-12-08T15:41:48Z	-
dc.date.available	2014-12-08T15:41:48Z	-
dc.date.issued	2002-11-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.41.6356	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28431	-
dc.description.abstract	A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550degreesC, two kinds of needlelike grains were found. The direction of the primary grain was along <211> and the growth of the secondary grain occurred along the <011> direction.	en_US
dc.language.iso	en_US	en_US
dc.subject	electroless plating	en_US
dc.subject	metal-induced-crystallization	en_US
dc.subject	amorphous silicon	en_US
dc.subject	polycrystalline silicon	en_US
dc.subject	thin film transistor	en_US
dc.title	Electroless plating with Pd induced crystallization of amorphous silicon thin films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.41.6356	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS	en_US
dc.citation.volume	41	en_US
dc.citation.issue	11A	en_US
dc.citation.spage	6356	en_US
dc.citation.epage	6357	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000182730100011	-
dc.citation.woscount	1	-
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