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dc.contributor.authorHu, GRen_US
dc.contributor.authorWu, YCSen_US
dc.contributor.authorChao, CWen_US
dc.contributor.authorHuang, TJen_US
dc.date.accessioned2014-12-08T15:41:48Z-
dc.date.available2014-12-08T15:41:48Z-
dc.date.issued2002-11-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.41.6356en_US
dc.identifier.urihttp://hdl.handle.net/11536/28431-
dc.description.abstractA metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550degreesC, two kinds of needlelike grains were found. The direction of the primary grain was along <211> and the growth of the secondary grain occurred along the <011> direction.en_US
dc.language.isoen_USen_US
dc.subjectelectroless platingen_US
dc.subjectmetal-induced-crystallizationen_US
dc.subjectamorphous siliconen_US
dc.subjectpolycrystalline siliconen_US
dc.subjectthin film transistoren_US
dc.titleElectroless plating with Pd induced crystallization of amorphous silicon thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.41.6356en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume41en_US
dc.citation.issue11Aen_US
dc.citation.spage6356en_US
dc.citation.epage6357en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000182730100011-
dc.citation.woscount1-
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