標題: | The effects of Pd2Si on the electroless plating Pd induced crystallization of amorphous silicon thin films |
作者: | Huang, CTJ Hu, GR Wu, YCS Chao, CW 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2003 |
摘要: | Electroless plating Pd method has been used to induce crystallization of amorphous silicon through the formation of Pd2Si. Unfortunately, after crystallization, the Pd2Si residues in the Si film degraded the polycrystalline quality. In this study, a two-step annealing process was used to reduce the Pd2Si quantity. Besides, post-RTA treatment was used to improve the quality of poly-Si. |
URI: | http://hdl.handle.net/11536/18665 |
ISBN: | 1-56677-385-7 |
期刊: | THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS |
Volume: | 2002 |
Issue: | 23 |
起始頁: | 155 |
結束頁: | 158 |
顯示於類別: | 會議論文 |