The effects of Pd2Si on the electroless plating Pd induced crystallization of amorphous silicon thin films

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, CTJ	en_US
dc.contributor.author	Hu, GR	en_US
dc.contributor.author	Wu, YCS	en_US
dc.contributor.author	Chao, CW	en_US
dc.date.accessioned	2014-12-08T15:26:17Z	-
dc.date.available	2014-12-08T15:26:17Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	1-56677-385-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18665	-
dc.description.abstract	Electroless plating Pd method has been used to induce crystallization of amorphous silicon through the formation of Pd2Si. Unfortunately, after crystallization, the Pd2Si residues in the Si film degraded the polycrystalline quality. In this study, a two-step annealing process was used to reduce the Pd2Si quantity. Besides, post-RTA treatment was used to improve the quality of poly-Si.	en_US
dc.language.iso	en_US	en_US
dc.title	The effects of Pd2Si on the electroless plating Pd induced crystallization of amorphous silicon thin films	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS	en_US
dc.citation.volume	2002	en_US
dc.citation.issue	23	en_US
dc.citation.spage	155	en_US
dc.citation.epage	158	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000186760700018	-
顯示於類別：	會議論文