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dc.contributor.authorChang, TYen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorChen, SWen_US
dc.contributor.authorKao, LMen_US
dc.contributor.authorChen, SKen_US
dc.contributor.authorTuan, Aen_US
dc.contributor.authorSu, TPen_US
dc.date.accessioned2014-12-08T15:42:06Z-
dc.date.available2014-12-08T15:42:06Z-
dc.date.issued2002-08-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0038-1101(02)00048-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/28603-
dc.description.abstractIn our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process. (C) 2002 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectgate oxide integrity (GOI)en_US
dc.subjectCo-salicideen_US
dc.subjectfluorine and nitrogen implantationen_US
dc.subjectleakage performanceen_US
dc.subjectbreakdown charge and stress induce leakage current (SILC)en_US
dc.titleImpact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide processen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0038-1101(02)00048-5en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume46en_US
dc.citation.issue8en_US
dc.citation.spage1097en_US
dc.citation.epage1101en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000177094400005-
Appears in Collections:Conferences Paper


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