Full metadata record
DC FieldValueLanguage
dc.contributor.authorHuang, CHen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorChen, WJen_US
dc.date.accessioned2014-12-08T15:42:45Z-
dc.date.available2014-12-08T15:42:45Z-
dc.date.issued2002-03-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1450618en_US
dc.identifier.urihttp://hdl.handle.net/11536/28978-
dc.description.abstractWe have characterized the Si/Si(0.6)Ge(0.4) heterostructure formed by two-step solid-phase reaction. Single crystalline behavior is evidenced by X-ray diffraction. In sharp contrast to conventional strain-relaxed SiGe, an extremely smooth surface close to the Si substrate is measured by cross-sectional transmission electron microscopy and atomic force microscopy. Good material quality is further evidenced from the near identical current-voltage characteristics for thermal oxide grown on Si/Si(0.6)Ge(0.4) and on the Si control sample. (C) 2002 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleCharacterization of Si/SiGe heterostructures on Si formed by solid phase reactionen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1450618en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume149en_US
dc.citation.issue3en_US
dc.citation.spageG209en_US
dc.citation.epageG211en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000174211100052-
dc.citation.woscount1-
Appears in Collections:Articles


Files in This Item:

  1. 000174211100052.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.