Characterization of Si/SiGe heterostructures on Si formed by solid phase reaction

doi:10.1149/1.1450618

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DC Field	Value	Language
dc.contributor.author	Huang, CH	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Chen, WJ	en_US
dc.date.accessioned	2014-12-08T15:42:45Z	-
dc.date.available	2014-12-08T15:42:45Z	-
dc.date.issued	2002-03-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.1450618	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28978	-
dc.description.abstract	We have characterized the Si/Si(0.6)Ge(0.4) heterostructure formed by two-step solid-phase reaction. Single crystalline behavior is evidenced by X-ray diffraction. In sharp contrast to conventional strain-relaxed SiGe, an extremely smooth surface close to the Si substrate is measured by cross-sectional transmission electron microscopy and atomic force microscopy. Good material quality is further evidenced from the near identical current-voltage characteristics for thermal oxide grown on Si/Si(0.6)Ge(0.4) and on the Si control sample. (C) 2002 The Electrochemical Society.	en_US
dc.language.iso	en_US	en_US
dc.title	Characterization of Si/SiGe heterostructures on Si formed by solid phase reaction	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.1450618	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	149	en_US
dc.citation.issue	3	en_US
dc.citation.spage	G209	en_US
dc.citation.epage	G211	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000174211100052	-
dc.citation.woscount	1	-
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