Full metadata record
DC FieldValueLanguage
dc.contributor.authorHuang, HTen_US
dc.contributor.authorChen, MJen_US
dc.contributor.authorSu, CWen_US
dc.contributor.authorChen, JHen_US
dc.contributor.authorHou, CSen_US
dc.contributor.authorLiang, MSen_US
dc.date.accessioned2014-12-08T15:43:46Z-
dc.date.available2014-12-08T15:43:46Z-
dc.date.issued2001-06-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.925260en_US
dc.identifier.urihttp://hdl.handle.net/11536/29588-
dc.description.abstractA trap generation statistical model with the trap sphere radius r as parameter has been newly formulated in closed-form for intrinsic breakdown of ultrathin oxides and, by incorporating the trap filling fraction p as the secondary parameter, can be practically useful in a manufacturing process. Experimental reproduction for different oxide thicknesses and areas has been achieved through the model. A certain criterion has readily been drawn from the model, with which the ultimate thickness limit for breakdown can be set.en_US
dc.language.isoen_USen_US
dc.titleA trap generation closed-form statistical model for intrinsic oxide breakdownen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.925260en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume48en_US
dc.citation.issue6en_US
dc.citation.spage1275en_US
dc.citation.epage1277en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000169044500040-
dc.citation.woscount2-
Appears in Collections:Articles


Files in This Item:

  1. 000169044500040.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.