Title: | Forward gated-diode measurement of filled traps in high-field stressed thin oxides |
Authors: | Chen, MJ Kang, TK Huang, HT Liu, CH Chang, YJ Fu, KY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | gated-diode;hot electron;MOSFET;neutral trap;oxide breakdown;SILC;thin oxide |
Issue Date: | 1-Aug-2000 |
Abstract: | The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power lan relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift. |
URI: | http://dx.doi.org/10.1109/16.853050 http://hdl.handle.net/11536/30369 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.853050 |
Journal: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 47 |
Issue: | 8 |
Begin Page: | 1682 |
End Page: | 1683 |
Appears in Collections: | Articles |
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