標題: | Characterization of hot-hole injection induced SILC and related disturbs in flash memories |
作者: | Yih, CM Ho, ZH Liang, MS Chung, SS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | flash memory;gate-disturb;read-disturb;SILC |
公開日期: | 1-二月-2001 |
摘要: | In this paper, we have proposed a new method for the study of disturb failure mechanisms caused by stress induced leakage current (SILC) in source-side erased flash memories. This method is able to directly separate the individual components of SILC due to either carrier charging/disharging in the oxide or the positive charge/trap assisted electron tunneling into the floating gate, In addition, the present method is very sensitive with capability of measuring ultralow current (<10(-19) A), Results show that, at low oxide field, the disturb is mainly contributed by the so-called charging/disharging of carriers into/from the oxide due to the capacitance coupling effect. While at high oxide field, the positive charge/trap assisted electron tunneling induced floating-gate charge variation is the major cause of disturb failure. |
URI: | http://dx.doi.org/10.1109/16.902731 http://hdl.handle.net/11536/29864 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.902731 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 48 |
Issue: | 2 |
起始頁: | 300 |
結束頁: | 306 |
顯示於類別: | 期刊論文 |