A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides

標題:	A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides
作者:	Zous, NK Wang, TH Yeh, CC Tsai, CW Huang, CM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1999
摘要:	The mechanisms and transient characteristics of hot hole stress and FN stress induced excess leakage currents in tunnel oxides are investigated. Hot hole SILC is found to have a more pronounced transient effect. The transient is attributed to positive oxide charge detrapping and thus annihilation of positive charge-assisted tunneling current. The positive charge assisted tunneling current can be annealed by substrate hot electron injection. The DC and transient components in FN SILC are also discussed.
URI:	http://hdl.handle.net/11536/19395 http://dx.doi.org/10.1109/RELPHY.1999.761647
ISBN:	0-7803-5220-3
DOI:	10.1109/RELPHY.1999.761647
期刊:	1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL
起始頁:	405
結束頁:	409
顯示於類別：	會議論文

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