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dc.contributor.authorZous, NKen_US
dc.contributor.authorWang, THen_US
dc.contributor.authorYeh, CCen_US
dc.contributor.authorTsai, CWen_US
dc.contributor.authorHuang, CMen_US
dc.date.accessioned2014-12-08T15:27:09Z-
dc.date.available2014-12-08T15:27:09Z-
dc.date.issued1999en_US
dc.identifier.isbn0-7803-5220-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/19395-
dc.identifier.urihttp://dx.doi.org/10.1109/RELPHY.1999.761647en_US
dc.description.abstractThe mechanisms and transient characteristics of hot hole stress and FN stress induced excess leakage currents in tunnel oxides are investigated. Hot hole SILC is found to have a more pronounced transient effect. The transient is attributed to positive oxide charge detrapping and thus annihilation of positive charge-assisted tunneling current. The positive charge assisted tunneling current can be annealed by substrate hot electron injection. The DC and transient components in FN SILC are also discussed.en_US
dc.language.isoen_USen_US
dc.titleA comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxidesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/RELPHY.1999.761647en_US
dc.identifier.journal1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUALen_US
dc.citation.spage405en_US
dc.citation.epage409en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000079933100064-
Appears in Collections:Conferences Paper


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