標題: | Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides |
作者: | Zous, NK Wang, TH Yeh, CC Tsai, CW Huang, CM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2-八月-1999 |
摘要: | The role of positive oxide charge in excess low-level leakage current in tunnel oxides induced by Fowler/Nordheim stress is investigated. A correlation between stress-induced gate current and substrate current in an n-channel metal-oxide-semiconductor field-effect transistor is observed. Both the gate current and the substrate current exhibit a significant transient effect. The mechanisms of the stress-induced currents and their field dependence are explored. Positive oxide charge tunnel detrapping is found to be the cause of the observed transient behavior in the two currents. The stress-created positive oxide charge can be significantly annealed by substrate hot electron injection. (C) 1999 American Institute of Physics. [S0003-6951(99)02226-3]. |
URI: | http://hdl.handle.net/11536/31158 |
ISSN: | 0003-6951 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 75 |
Issue: | 5 |
起始頁: | 734 |
結束頁: | 736 |
顯示於類別: | 期刊論文 |