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dc.contributor.authorLee, JWen_US
dc.contributor.authorLee, CLen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorLai, CSen_US
dc.date.accessioned2014-12-08T15:44:00Z-
dc.date.available2014-12-08T15:44:00Z-
dc.date.issued2001-04-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.915716en_US
dc.identifier.urihttp://hdl.handle.net/11536/29744-
dc.description.abstractThis paper reports the TEOS oxide deposited on the polysilicon film which was prepared by using the disilane chemical vapor deposition. Compared to the thermally grown oxide or TEOS (tetra-ethyl-ortho-silicate) oxide deposited on the conventional silane polysilicon him, it had symmetrical J-E characteristics that had lower leakage currents but much higher breakdown field, a lower electron trapping rate, and a much larger charge to breakdown. These good properties are attributed to the smoother surface of the deposited disilane poly-I film and the more incorporation of nitrogen during the rapid thermal annealing (RTA) in N2O ambient. It is suitable to be as the inter-polyoxide of the electrically-erasable programmable read only memory (EEPROM).en_US
dc.language.isoen_USen_US
dc.titleHigh reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.915716en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume48en_US
dc.citation.issue4en_US
dc.citation.spage743en_US
dc.citation.epage749en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000167985100018-
dc.citation.woscount5-
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