Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JW | en_US |
dc.contributor.author | Lee, CL | en_US |
dc.contributor.author | Lei, TF | en_US |
dc.contributor.author | Lai, CS | en_US |
dc.date.accessioned | 2014-12-08T15:44:00Z | - |
dc.date.available | 2014-12-08T15:44:00Z | - |
dc.date.issued | 2001-04-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/16.915716 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29744 | - |
dc.description.abstract | This paper reports the TEOS oxide deposited on the polysilicon film which was prepared by using the disilane chemical vapor deposition. Compared to the thermally grown oxide or TEOS (tetra-ethyl-ortho-silicate) oxide deposited on the conventional silane polysilicon him, it had symmetrical J-E characteristics that had lower leakage currents but much higher breakdown field, a lower electron trapping rate, and a much larger charge to breakdown. These good properties are attributed to the smoother surface of the deposited disilane poly-I film and the more incorporation of nitrogen during the rapid thermal annealing (RTA) in N2O ambient. It is suitable to be as the inter-polyoxide of the electrically-erasable programmable read only memory (EEPROM). | en_US |
dc.language.iso | en_US | en_US |
dc.title | High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/16.915716 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 48 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 743 | en_US |
dc.citation.epage | 749 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000167985100018 | - |
dc.citation.woscount | 5 | - |
Appears in Collections: | Articles |
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