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dc.contributor.authorLee, JYen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorOu, JHen_US
dc.contributor.authorChen, YFen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:45:06Z-
dc.date.available2014-12-08T15:45:06Z-
dc.date.issued2000-07-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4526(99)02981-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/30415-
dc.description.abstractThe amplitude and periodicity of the reflection high-energy electron diffraction (RHEED) oscillations displayed strong temperature dependence in homoepitaxy of SrTiO3(STO) films. Combining with the AFM observations, the results suggest that the oscillations are not directly related to the layer-by-layer growth. (C) 2000 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjecthomoepitaxial SrTiO3 thin filmen_US
dc.subjectRHEEDen_US
dc.subjectepitaxial growthen_US
dc.subjectatomic force microscopyen_US
dc.titleRHEED intensity oscillations in homoepitaxial growth of SrTiO3 filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0921-4526(99)02981-6en_US
dc.identifier.journalPHYSICA Ben_US
dc.citation.volume284en_US
dc.citation.issueen_US
dc.citation.spage2099en_US
dc.citation.epage2100en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000087423100487-
Appears in Collections:Conferences Paper


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