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dc.contributor.author莊敏男en_US
dc.contributor.authorZhuang, Min-Nanen_US
dc.contributor.author戴國仇en_US
dc.contributor.authorDai, Guo-Qiuen_US
dc.date.accessioned2014-12-12T02:16:16Z-
dc.date.available2014-12-12T02:16:16Z-
dc.date.issued1995en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT844124002en_US
dc.identifier.urihttp://hdl.handle.net/11536/61149-
dc.description.abstract在這篇論文裡，我們介紹高功率雷射端面鍍膜上的研究。藉由在半導體雷射的端面上 鍍一層或多層介電質薄膜以改變反射率；我們可以改善半導體雷射的特性，增加輸出 功率。採用單層四分之一波長厚的二氧化矽當抗反射膜可以將反射率由原來31％改變 為5％。而使用三對四分之一波長厚的二氧化矽及二氧化鈦可將反射率提高為92％。 雷射端面經過高反射及抗反射鍍膜，抗反射面輸出功率幾乎為未鍍膜前的兩倍，當輸 入電流2.5安培時，輸出功率可達2瓦、臨界電流由235毫安增加為260毫安、單面外部 量子效益（external quantum efficiency）由0.37增加為0.72、電光轉換效益（ wall plug efficiency）由0.225增加為0.37。zh_TW
dc.language.isozh_TWen_US
dc.subject光電工程zh_TW
dc.subject光學zh_TW
dc.subject電流zh_TW
dc.subject電光轉換效益zh_TW
dc.subject量子效益zh_TW
dc.subject端面鍍膜zh_TW
dc.subject半導體雷射zh_TW
dc.subject高反射膜zh_TW
dc.subject抗反射膜zh_TW
dc.subject高功率zh_TW
dc.subjectOPTI-ELECTRONIC-ENGINEERINGen_US
dc.subjectOPTICSen_US
dc.subjectfacet coatingen_US
dc.subjectAR/HRen_US
dc.subjecthigh poweren_US
dc.subjectsemiconductoren_US
dc.title高功率GaAs/A1GaAs單一量子井雷射端面之高反射及抗反射鍍膜zh_TW
dc.titleHigh and Anti-reflection Facet Coating of High Power GaAs/A1GaAs Single Quantum Well Lasersen_US
dc.typeThesisen_US
dc.contributor.department光電工程學系zh_TW
Appears in Collections:Thesis


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