高功率半導體雷射製作及高頻雷射包裝之量測

Abstract

In this thesis, we report the fabrication of broad area high power single quantum well AlGaAs / GaAs graded index seperate confinement ( GRINSCH SQW ) lasers by proton implication and molecular beam epitaxy techniques. Threshold current of 450 mA is obtained for a 1mm long and 100m m wide cavity. At 1.5 A injection, laser output reaches 750 mW at room temperature pulsed condition. We also die bond the SEL array on the C-block. At the 500 mA injection, the lasers output reach 50 mW at room temperature CW condition. We also measure the frequency bandwidth of several different packages of the SEL. The SEL with ceramics package have the best bandwidth ( over 1 GHz ) .