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標題: 具應變之0.808UM高功效半導體雷射
0.808.mu.m High Power Strained Quantum Well Diode Laser
作者: 黃凱風
HUANG KAI-FENG
交通大學電子物理系
關鍵字: 半導體雷射;量子井;分子束磊晶生長;雷射二極體;Semiconductor laser;Quantum well;MBE growth;Laser diode
公開日期: 1998
官方說明文件#: NSC87-2215-E009-018
URI: http://hdl.handle.net/11536/95066
https://www.grb.gov.tw/search/planDetail?id=396179&docId=69979
Appears in Collections:Research Plans


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