具應變之0.808UM高功效半導體雷射

Title:	具應變之0.808UM高功效半導體雷射 0.808.mu.m High Power Strained Quantum Well Diode Laser
Authors:	黃凱風 HUANG KAI-FENG 交通大學電子物理系
Keywords:	半導體雷射;量子井;分子束磊晶生長;雷射二極體;Semiconductor laser;Quantum well;MBE growth;Laser diode
Issue Date:	1998
Gov't Doc #:	NSC87-2215-E009-018
URI:	http://hdl.handle.net/11536/95066 https://www.grb.gov.tw/search/planDetail?id=396179&docId=69979
Appears in Collections:	Research Plans

APA	黃., & HUANG K. (1998). 具應變之0.808UM高功效半導體雷射. https://www.grb.gov.tw/search/planDetail?id=396179&docId=69979.
Bibtex	@article{1998, title={具應變之0.808UM高功效半導體雷射}, author={黃凱風 and HUANG KAI-FENG}, journal={https://www.grb.gov.tw/search/planDetail?id=396179&docId=69979}, year={1998}, url={https://ir.lib.nycu.edu.tw/handle/11536/95066}, }