完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 黃凱風 | en_US |
dc.contributor.author | HUANG KAI-FENG | en_US |
dc.date.accessioned | 2014-12-13T10:38:07Z | - |
dc.date.available | 2014-12-13T10:38:07Z | - |
dc.date.issued | 1998 | en_US |
dc.identifier.govdoc | NSC87-2215-E009-018 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/95066 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=396179&docId=69979 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 半導體雷射 | zh_TW |
dc.subject | 量子井 | zh_TW |
dc.subject | 分子束磊晶生長 | zh_TW |
dc.subject | 雷射二極體 | zh_TW |
dc.subject | Semiconductor laser | en_US |
dc.subject | Quantum well | en_US |
dc.subject | MBE growth | en_US |
dc.subject | Laser diode | en_US |
dc.title | 具應變之0.808UM高功效半導體雷射 | zh_TW |
dc.title | 0.808.mu.m High Power Strained Quantum Well Diode Laser | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 交通大學電子物理系 | zh_TW |
顯示於類別: | 研究計畫 |