紅光InGaP/InGaAlP雷射的製程及特性分析

Abstract

InGaAlP紅光雷射在光儲存系統和雷射印表機方面有很廣泛的應用.本論文 報告量子井InGaP/InGaAlP雷射二極體的研製和特性分析.包括氫離子佈質 和脊狀波導結構的雷射皆被製作.對寬面積元件而言,最低臨界電流密度 約 0.6安培/平方公分.在脈衝電流操作下(5微秒脈衝寬,1千赫茲週期),對 一寬 50微米,長1000微米的雷射其輸出功率達500毫瓦/面,功率效率係數 為0.38瓦/安培.窄寬度的元件可在室溫下連續波操作.對一6微米寬,500微 米長的元件,其臨界電流在50-60毫安之間,偏壓電流在100毫安時,輸出功 率超過 10毫瓦.元件的特性溫度約為80度.臨界電流密度,功率效率係數與 共振腔長長度相關.根據實際的量測結果,我們可以針對不同工作寬度的元 件,選擇適當的雷射長度,使元件在較佳的特性下操作. The Visible InGaAlP laser diodes are the very attractive ligth sources for applications in optical data storage and laser printing. In this thesis, we present the fabrication and characterization of visible InGaP/InGaAlP quantum well lasers operated at 655 nm. A low threshold current density around 600 mA per square-centimeter is achieved for broad stripe lasers with 50/100 micrometer aperature. Pulsed output power 500 mW per facet with 300 mA of threshold current is demonstrated for a 50 micro-wide,1000 micro-long device. (5 micro second pulsed width, 1kHz repetition rate). The slope efficiency is about 0.38 W/A per facet. Room-temperature continuous-wave operation is achieved for narrow stripe lasers. The output power exceeding 10 mW with 50-60 mA of threshold current is demonstrated for 6 micro-wide,1000 micro-long devices. The characteristic temperature is about 80 K. The dependence of threshold current density and external quantum efficiency on cavity length is realized. From this relation, we can select the suitable cavity length for lasers of various stripe width in order to operate at lower threshold current density and higher slope efficiency.