高功率半導體雷射製作及高頻雷射包裝之量測

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	林來慶	en_US
dc.contributor.author	Lin, Lai-Qing	en_US
dc.contributor.author	黃凱風	en_US
dc.contributor.author	Huang, Kai-Feng	en_US
dc.date.accessioned	2014-12-12T02:18:19Z	-
dc.date.available	2014-12-12T02:18:19Z	-
dc.date.issued	1996	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT854429001	en_US
dc.identifier.uri	http://hdl.handle.net/11536/62497	-
dc.description.abstract	In this thesis, we report the fabrication of broad area high power single quantum well AlGaAs / GaAs graded index seperate confinement ( GRINSCH SQW ) lasers by proton implication and molecular beam epitaxy techniques. Threshold current of 450 mA is obtained for a 1mm long and 100m m wide cavity. At 1.5 A injection, laser output reaches 750 mW at room temperature pulsed condition. We also die bond the SEL array on the C-block. At the 500 mA injection, the lasers output reach 50 mW at room temperature CW condition. We also measure the frequency bandwidth of several different packages of the SEL. The SEL with ceramics package have the best bandwidth ( over 1 GHz ) .	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	高功率	zh_TW
dc.subject	半導體雷射	zh_TW
dc.subject	高頻	zh_TW
dc.subject	電子物理	zh_TW
dc.subject	電子工程	zh_TW
dc.subject	High Power	en_US
dc.subject	Laser Diodes	en_US
dc.subject	High speed	en_US
dc.subject	ELECTROPHYSICS	en_US
dc.subject	ELECTRONIC-ENGINEERING	en_US
dc.title	高功率半導體雷射製作及高頻雷射包裝之量測	zh_TW
dc.title	Fabrication of the High Power Laser Diodes and Measurement on the Packages of the High speed Laser Diodes	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子物理系所	zh_TW
顯示於類別：	畢業論文