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dc.contributor.author譚明瑄en_US
dc.contributor.authorTan, Ming-Hsuanen_US
dc.contributor.author林建中en_US
dc.contributor.authorLin, Chien-Chungen_US
dc.date.accessioned2014-12-12T02:37:10Z-
dc.date.available2014-12-12T02:37:10Z-
dc.date.issued2013en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070058013en_US
dc.identifier.urihttp://hdl.handle.net/11536/73171-
dc.description.abstract中間能帶太陽能電池(IBSC)是一種新穎的想法,IBSC理論上的光電轉換效率(PCE)可以達到63.1%,主要由於它擁有三個頻段的吸收。一種實現IBSC的方法為將量子點(QD)材料置入單能隙的材料中形成QD/阻隔層的結構,當阻隔層夠狹窄,則能帶上會有三個能帶:導帶(CB),價帶(VB)和中間帶(IB)。 在這篇論文中,我們提出量子點嵌入雙接面太陽能電池的設計和數值研究。我們使用MATLAB®平台建立了電池模型。 模擬的方法包括使用光場傳輸矩陣模擬IBSC異質多層反射,自由電子捕捉機率和近似漂移擴散法計算可萃取到外部的電流。最後的模擬結果顯示在一個太陽強度下,理想的InGaP / GaAs+的InAs量子點雙接面電池的PCE可以達到46.76%。zh_TW
dc.description.abstractIntermediate band solar cell (IBSC) is a novel idea prosed by Marti et al, and the theory claim the power conversion efficiency (PCE) can reach 63.1% due to its three bands absorption. A way to realize IBSC is introducing quantum dot (QD) layer into bulk material, and the QD/barrier layer would behave like to have three bands: conduction band (CB), valence band (VB) and intermediate band (IB). In this thesis, a quantum dot embedded dual-junction solar cell is proposed and studied numerically. We built up the device model by using Matlab® coding. The transmission matrix, collection probability and quasi-drift diffusion methods are applied to simulate the multiple reflection in the IBSC heterostructures. The final simulation shows the PCE for ideal InGaP/GaAs+InAs QD dual junction cell can reach 46.76% under one sun illumination.en_US
dc.language.isoen_USen_US
dc.subject中間能帶太陽能電池zh_TW
dc.subject太陽能電池zh_TW
dc.subject量子點zh_TW
dc.subject模擬zh_TW
dc.subject串接型電池zh_TW
dc.subject傳輸矩陣方法zh_TW
dc.subjectIntermediate band solar cellen_US
dc.subjectphotovoltaic cellsen_US
dc.subjectquantum doten_US
dc.subjectsimulationen_US
dc.subjecttandem cellen_US
dc.subjecttransmission matrix methoden_US
dc.title量子點中間能帶之雙接面太陽能電池之數值分析zh_TW
dc.titleNumerical Study of Quantum Dot embedded intermediate band dual-junctions Solar Cellsen_US
dc.typeThesisen_US
dc.contributor.department光電系統研究所zh_TW
Appears in Collections:Thesis