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dc.contributor.author吳家岱en_US
dc.contributor.authorJa-Dai Wuen_US
dc.contributor.author溫瓌岸en_US
dc.contributor.author溫文燊en_US
dc.contributor.authorKuei-Ann Wenen_US
dc.contributor.authorWen-Shen Wuenen_US
dc.date.accessioned2014-12-12T03:03:02Z-
dc.date.available2014-12-12T03:03:02Z-
dc.date.issued2006en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009411667en_US
dc.identifier.urihttp://hdl.handle.net/11536/80580-
dc.description.abstract本文提出一個完全整合在單一晶片上使用0.13-μm CMOS製程的E類功率放大器,此E類功率放大器結合了F類的前級放大器並採用有限的小面積電感來取代大面積的射頻阻隔器以易於整合在單一晶片上。此E類放大器在輸入功率為-3dBm、操作頻率為2.5GHz之下,可達到21dBm的輸出功率和48.4%的功率增加效率,在設計的頻帶內,2.3GHz~2.7GHz,功率增加效率仍然可以維持在44%以上。且為了增加系統模擬的時間,本文提出此E類功率放大器的形為模型。藉由此形為模型,系統模擬的時間可以減少93%左右。zh_TW
dc.description.abstractAn on-chip CMOS Class-E Power Amplifier (PA) implemented in 0.13-□m CMOS technology is presented. The Class-E PA includes a Class-F driver and replaces a large RF choke with a small finite dc-feed inductor for on-chip integration. The proposed Class-E PA achieves power added efficiency (PAE) of 48.4 % while delivering 21 dBm output power with the input driving power of -3 dBm at 2.5 GHz. In the design band, 2.3GHz~2.7GHz, PAE is still above 44%. In order to improve the simulation time of RF/Baseband co-simulation the behavior model of proposed PA is presented. The simulation time of RF/Baseband co-simulation can be reduced about 93% by the proposed behavior model.en_US
dc.language.isoen_USen_US
dc.subject功率放大器zh_TW
dc.subject互補式金氧半zh_TW
dc.subjectE類zh_TW
dc.subjectF類zh_TW
dc.subject金球互通微波存取zh_TW
dc.subject形為模型zh_TW
dc.subject極座標發射器zh_TW
dc.subject串疊zh_TW
dc.subject射頻zh_TW
dc.subjectPower Amplifieren_US
dc.subjectCMOSen_US
dc.subjectClass-Een_US
dc.subjectClass-Fen_US
dc.subjectWiMAXen_US
dc.subjectBehavior Modelen_US
dc.subjectPolar Transmitteren_US
dc.subjectCascodeen_US
dc.subjectRFen_US
dc.subjectFully-Integrateden_US
dc.subjectFinite DC-Feed Inductoren_US
dc.subjectCo-Simulationen_US
dc.subjectOn-Chipen_US
dc.title射頻互補金氧半E類功率放大器設計zh_TW
dc.titleRF CMOS Class-E Power Amplifier Designen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis


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