製備合成氧化物在互補式金氧半閘極介電層及自旋電元件應用之研究(III)

Full metadata record

DC Field	Value	Language
dc.contributor.author	趙天生	en_US
dc.contributor.author	TIEN-SHENGCHAO	en_US
dc.date.accessioned	2014-12-13T10:31:24Z	-
dc.date.available	2014-12-13T10:31:24Z	-
dc.date.issued	2004	en_US
dc.identifier.govdoc	NSC93-2215-E009-037	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/90907	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1026707&docId=195185	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	製備合成氧化物在互補式金氧半閘極介電層及自旋電元件應用之研究(III)	zh_TW
dc.title	Deposition and Characterization of Compound Oxide Films for High-K CMOS Gate Dielectrics and Spintronic Applications(III)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子物理系	zh_TW
Appears in Collections:	Research Plans

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