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DC FieldValueLanguage
dc.contributor.author荊鳳德en_US
dc.contributor.authorCHIN ALBERTen_US
dc.date.accessioned2014-12-13T10:31:57Z-
dc.date.available2014-12-13T10:31:57Z-
dc.date.issued2000en_US
dc.identifier.govdocNSC89-2215-E009-100zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/91252-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=583875&docId=109703en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.title矽鍺非應力層在高速電晶體及射頻元件的應用zh_TW
dc.titleApplication of Strain-Relaxed SiGe in High Speed Transistor and RF Devicesen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系zh_TW
Appears in Collections:Research Plans


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