| 標題: | 氮化鎵材料製程開發及元件製作(II) GaN-Based Fabrication Process Development and Device Fabrication(II) |
| 作者: | 王興宗 WANG SHING CHUNG 交通大學光電工程研究所 |
| 公開日期: | 2002 |
| 官方說明文件#: | NSC91-2215-E009-034 |
| URI: | http://hdl.handle.net/11536/92789 https://www.grb.gov.tw/search/planDetail?id=736771&docId=139421 |
| Appears in Collections: | Research Plans |
- 氮化鎵材料製程開發及元件製作(I) / 王興宗;WANG SHING CHUNG
- 氮化鎵材料製程開發及元件製作(III) / 王興宗;WANG SHING CHUNG
- 氮化鎵族光電材料與元件之研發---子計畫II：氮化鎵族光電元件製程之開發(II) / 王興宗;WANG SHING CHUNG
- 氮化鎵族光電材料與元件之研發---子計畫II：氮化鎵族光電元件製程之開發(I) / 王興宗
- Performance of InGaN-GaN LEDs fabricated using glue bonding on 50-mm Si substrate / Peng, WC;Wu, YS
- Nano-processing techniques applied in GaN-Based light-emitting devices with self-assembly Ni nano-masks / Chiu, Ching-Hua;Lo, Ming-Hua;Lu, Tien-Chang;Yu, Peichen;Huang, H. W.
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