不同型摻雜材料浮動閘極快閃式記憶元件可靠性問題之研究

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DC Field	Value	Language
dc.contributor.author	莊紹勳	en_US
dc.contributor.author	Chung Steve S	en_US
dc.date.accessioned	2014-12-13T10:35:13Z	-
dc.date.available	2014-12-13T10:35:13Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2218-E009-110	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/93274	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=619835&docId=115468	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	快閃式記憶體	zh_TW
dc.subject	可靠度	zh_TW
dc.subject	浮動閘	zh_TW
dc.subject	資料持久力	zh_TW
dc.subject	氧化層傷害	zh_TW
dc.subject	Frash memory	en_US
dc.subject	Reliability	en_US
dc.subject	Floating gate	en_US
dc.subject	Data retention	en_US
dc.subject	Oxide damage	en_US
dc.title	不同型摻雜材料浮動閘極快閃式記憶元件可靠性問題之研究	zh_TW
dc.title	A Study on the Reliability Issues of Flash EEPROM with Different Floating Gate Materials	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
Appears in Collections:	Research Plans

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