深次微米T型閘極金氧半電晶體之研製

Files

882215E009030.pdf (561.62 KB)

Date

Authors

Keywords

金氧半場效電晶體 , 窄線寬效應 , 橋接效應 , 深次微米 , MOSFET , Narrow line-width effect , Bridging effect , Deep submicrometer

URI

https://www.grb.gov.tw/search/planDetail?id=418076&docId=74161
https://ir.lib.nycu.edu.tw/handle/11536/94236

Collections

研究計畫;;Research Plans