氮化鎵材料製程開發及元件製作(I)

Full metadata record

DC Field	Value	Language
dc.contributor.author	王興宗	en_US
dc.contributor.author	WANG SHING CHUNG	en_US
dc.date.accessioned	2014-12-13T10:37:34Z	-
dc.date.available	2014-12-13T10:37:34Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-102	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94732	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=660682&docId=125042	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	氮化鎵	zh_TW
dc.subject	製程開發	zh_TW
dc.subject	GaN	en_US
dc.subject	Process development	en_US
dc.title	氮化鎵材料製程開發及元件製作(I)	zh_TW
dc.title	GaN-Based Fabrication Process Development and Device Fabrication(I)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學光電工程研究所	zh_TW
Appears in Collections:	Research Plans