Enhancement of the optical and electrical properties in InGaAlP/InGaP PIN heterostructures by rapid thermal annealing on misoriented substrate

Abstract

We have studied the optical and electrical properties of InGaAlP/InGaP PIN heterostructures by the effects of post-growth annealing, substrate misorientation and growth temperature. For the as-grown p-type In-0.5(Ga0.5Al0.5)(0.5)P, the 15 degrees misoriented sample shows the largest hole concentration of 1 x 10(18) cm(-3) as compared to 20 and 10 degrees misoriented samples. After annealing at 900 degrees C for 30 s, the hole concentration increases about three times to 2.6 x 10(18) cm(-3). The increased hole concentration is related to the four times enhanced photoluminescence (PL) intensity. In the In0.6Ga0.4P/In-0.5(Ga0.6Al0.4)(0.5)P stained multiple quantum wells, the post-growth annealing also improves the PL integrated intensity. The PL intensity on an as-grown sample decreases with the increased degree of misorientation, while the PL peak energy increases with the increased degree of misorientation, from 0 degrees, 2 degrees, 10 degrees toward 15 degrees. The PL intensities are larger for samples grown at 760 degrees C than those grown at 700 degrees C. Copyright (C) 1996 Elsevier Science Ltd.