OXIDATION STUDY OF GE CONDENSATION ON SGOI NANOWIRE BIOSENSOR FABRICATION

Abstract

The Ge condensation method is effective in increasing the Ge fraction of Ge in SGOI. Previous studies by the authors confirmed a correlation between the Ge fraction and the sensitivity of the SiGe nano-wire sensor. To understand how Ge condensation on an SGOI nano-wire sensor helps to optimize oxidation conditions and sensitivity, the effect of oxidizing gas and the SiGe/alpha-Si stacked structure on the movement of Ge is investigated. The analytical results reveal that the sensitivity of SiGe nano-wires can be optimized by stacking an Si1-xGex layer that contains 14% Ge on a 200 angstrom-thick alpha-Si layer and treating the stack with O-2 gas diluted by 13% N-2 for 3 min.