Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C

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dc.citation.epage275en_US
dc.citation.spage271en_US
dc.citation.volume403en_US
dc.contributor.authorCheng, KLen_US
dc.contributor.authorLiu, CCen_US
dc.contributor.authorFu, CMen_US
dc.contributor.authorCheng, HCen_US
dc.contributor.authorLee, Cen_US
dc.contributor.authorYew, TRen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:27:35Z
dc.date.available2014-12-08T15:27:35Z
dc.date.issued1996en_US
dc.identifier.isbn1-55899-306-1en_US
dc.identifier.issn0272-9172en_US
dc.identifier.journalPOLYCRYSTALLINE THIN FILMS: STRUCTURE, TEXTURE, PROPERTIES, AND APPLICATIONS IIen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/19826
dc.identifier.wosnumberWOS:A1996BG51T00041
dc.language.isoen_USen_US
dc.titlePolycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees Cen_US
dc.typeProceedings Paperen_US

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