Characterization of the low temperature activated P+/N junction formed by implant into silicide method
| dc.citation.epage | 641 | en_US |
| dc.citation.spage | 640 | en_US |
| dc.contributor.author | Chang, Kow-Ming | en_US |
| dc.contributor.author | Lin, Jian-Hong | en_US |
| dc.contributor.author | Yang, Chih-Hsiang | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:16:18Z | |
| dc.date.available | 2014-12-08T15:16:18Z | |
| dc.date.issued | 2007 | en_US |
| dc.identifier.isbn | 978-1-4244-1891-6 | en_US |
| dc.identifier.journal | 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12078 | |
| dc.identifier.wosnumber | WOS:000255857100330 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characterization of the low temperature activated P+/N junction formed by implant into silicide method | en_US |
| dc.type | Proceedings Paper | en_US |
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