Fabrication of very high resistivity Si with low loss and cross talk

Abstract

We have used proton and As+ implantation to increase the resistivity of conventional Si (10 Omega-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 M Omega-cm is measured that is close to intrinsic Si and semi-insulating GaAs, Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 mu m gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast similar to 1 ps carrier lifetime stable even after a 400 degrees C annealing for 1 h, Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 Angstrom oxides.