電漿製程天線效應對超薄閘氧化層電晶體特性影響之研究

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882215E317005.pdf (298.34 KB)

Date

1999

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天線效應, 電漿製程, 超薄閘, 氧化層, 充電損害, 深次微米, 光阻, 灰化, Antenna effect, Plasma process, Ultrathin gate, Oxided layer, Charging damage, Deep submicrometer, Photo resistance, Ashing

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https://www.grb.gov.tw/search/planDetail?id=428978&docId=76777
 https://ir.lib.nycu.edu.tw/handle/11536/94383

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研究計畫;;Research Plans

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