High-performance In0.52Al0.48As/In0.6Ga0.4As power metamorphic high electron mobility transistor for Ka-band applications

Abstract

A 70nm In0.52Al0.48As/In0.6Ga0.4As power metamorphic high electron mobility transistor (MHEMT) with a double delta-doping structure was fabricated and evaluated. The device has a high transconductance of 827mS/mm. The saturated drain-source current of the device is 890mA/mm. A current gain cutoff frequency (f(T)) of 200GHz and a maximum oscillation frequency (f(max)) of 300GHz were achieved owing to the nanometer gate length and high indium content in the channel. When measured at 32 GHz, the 0.07x160 mu m(2) device demonstrates a maximum output power of 14.5dBm (176mW/mm) and a P I dB of 11.1dBm (80mW/mm) with a 9.5dB power gain. The excellent DC and RF performance of the 70mn MHEMT are comparable to those of InP-based HEMTs and show the great potential for Ka-band power applications.