砷化鎵晶片高溫接合中介面空孔之研究

dc.contributor.author吳耀銓en_US
dc.contributor.authorYEWCHUNG SERMONWUen_US
dc.contributor.department國立交通大學材料科學與工程學系zh_TW
dc.date.accessioned2014-12-13T10:29:43Z
dc.date.available2014-12-13T10:29:43Z
dc.date.issued2000en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC89-2215-E009-075zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=574873&docId=107450en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/89575
dc.language.isozh_TWen_US
dc.title砷化鎵晶片高溫接合中介面空孔之研究zh_TW
dc.titleHigh-Temperature Healing of Interfacial Voids in GaAs Wafer Bondingen_US
dc.typePlanen_US

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