Impact of Geometry Aspect Ratio on 10-nm Gate-All-Around Silicon-Germanium Nanowire Field Effect Transistors

Abstract

In this paper, we study electrical characteristics of gate-all-around (GAA) silicon-germanium (SiGe) nanowire field effect transistors (NWFETS) with different aspect ratio (AR) of channel. Device characteristics: the subthreshold swing (SS), the drain induced barrier lowering (DIBL), and the I-ON/I-OFF ratio are simulated by using three-dimensional quantum mechanically corrected device simulation. Electrical characteristics of 10-nm-gate GAA Si1-xGex NWFET devices are explored with respect to different thickness of SiGe and Ge\'s mole fraction. It is investigated that an ellipse-shaped channel with a small aspect ratio possesses better DC characteristics, compared with the one which has large AR due to its good gate controllability.