TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL

Abstract

A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 mu m. The importance of the two injection mechanisms, thermionic emission and quantum tunneling, is evaluated.